Principles of Semiconductor Devices
International Second Edition
Sorozatcím: The Oxford Series in Electrical and Computer Engineering;
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A termék adatai:
- Kiadás sorszáma 2
- Kiadó OUP USA
- Megjelenés dátuma 2012. január 5.
- ISBN 9780199896349
- Kötéstípus Puhakötés
- Terjedelem576 oldal
- Méret 193x236x30 mm
- Súly 980 g
- Nyelv angol 0
Kategóriák
Rövid leírás:
For the international second edition, the author builds upon and expands on hallmark features of the book established in the first edition, adding sections on new technology and increasing the number of end-of-chapter problems by 30%. Updated material relating to the environmental applications of technology was added , as well as a new chapter on nanoscale devices. Chapters on MOS capacitor and generation and recombination were also revised and updated.
TöbbHosszú leírás:
For the international second edition, the author builds upon and expands on hallmark features of the book established in the first edition, adding sections on new technology and increasing the number of end-of-chapter problems by 30%. Updated material relating to the environmental applications of technology was added , as well as a new chapter on nanoscale devices. Chapters on MOS capacitor and generation and recombination were also revised and updated.
The book is divided into 4 parts: Part I on Semiconductor Physics; Part II on the principles of operation and modeling of the fundamental junctions and transistors; Part III on the diode, MOSFET and BJT topics needed for circuit design, and Part IV on photonic devices, microwave FETs, negative-resistance diodes, and power devices. Within each part, material is presented hierarchically, with core topics first, followed by advanced topics.
Tartalomjegyzék:
PART I INTRODUCTION TO SEMICONDUCTORS
1 lNTRODUCTION TO CRYSTALS AND CURRENT CARRIERS
IN SEMICONDUCTORS, THE ATOMIC-BOND MODEL
1.1 INTRODUCTION TO CRYSTALS
1.1.1 Atomic Bonds
1.1.2 Three-Dimensional Crystals
1.1.3 Two-Dimensional Crystals: Graphene and Carbon Nanotubes
1.2 CURRENT CARRIERS
1.2.1 Two Types of Current Carriers in Semiconductors
1.2.2 N?Type and P-Type Doping
1.2.3 Electroneutrality Equation
1.2.4 Electron and Hole Generation and Recombination in Thermal Equilibrium
1.3 BASICS OF CRYSTAL GROWTH AND DOPING TECHNIQUES
1.3.1 Crystal-Growth Techniques
1.3.2 Doping Techniques
Summary
Problems
Review Questions
2 THE ENERGY-BAND MODEL
12.1 ELECTRONS AS WAVES
2.1.1 De Broglie Relationship Between Particle and Wave Properties
2.1.2 Wave Function and Wave Packet
2.1.3 Schrodinger Equation
2.2 ENERGY LEVELS IN ATOMS AND ENERGY BANDS IN CRYSTALS
2.2.1 Atomic Structure
2.2.2 Energy Bands in Metals
2.2.3 Energy Gap and Energy Bands in Semiconductors and Insulators
12.3 ELECTRONS AND HOLES AS PARTICLES
2.3.1 Effective Mass and Real E-k Diagrams
2.3.2 The Question of Electron Size: The Uncertainty Principle
2.3.3 Density of Electron States
2.4 POPULATION OF ELECTRON STATES, CONCENTRATIONS OF
ELECTRONS A:"D HOLES
2.4.1 Fermi-Dirac Distribution
2.4.2 Maxwell-Boltzmann Approximation and Effective Density of States
2.4.3 Fermi Potential and Doping
2.4.4 Nonequilibrium Carrier Concentrations and Quasi-Fermi Levels
Summary
Problems
Review Questions
3 DRIFT
3.1 ENERGY BANDS WITH APPLIED ELECTRIC FIELD
3.1.1 Energy-Band Presentation of Drift Current
3.1.2 Resistance and Power Dissipation due to Carrier Scattering
3.2 OHM'S LAW, SHEET RESISTANCE, AND CONDUCTIVITY
3.2.1 Designing Integrated-Circuit Resistors
3.2.2 Differential Form of Ohm's Law
3.2.3 Conductivity Ingredients
3.3 CARRIER MOBILITY
3.3.1 Thermal and Drift Velocities
3.3.2 Mobility Definition
3.3.3 Scattering Time and Scattering Cross Section
3.3.4 Mathieson's Rule
°3.3.5 Hall Effect
Summary
Problems
Review Questions
4 DlFFUSION
4.1 DIFFUSION-CURRENT EQUATION
4.2 DIFFUSION COEFFICIENT
4.2.1 Einstein Relationship
L4.2.2 Haynes-Shockley Experiment
4.2.3 Arrhenius Equation
4.3 BASIC CONTINUITY EQUATION
Summary
Problems
Review Questions
5 GENERATION AND RECOMBINATION
5.1 GENERATION AND RECOMBINATION MECHANISMS
5.2 GENERAL FORM OF THE CONTINUITY EQUATION
5.2.1 Recombination and Generation Rates
5.2.2 Minority-Carrier Lifetime
5.2.3 Diffusion Length
5.3 GENERATION AND RECOMBINATION PHYSICS AND SHOCKLEYREAD-
HALL (SRH) THEORY
5.3.1 Capture and Emission Rates in Thermal Equilibrium
5.3.2 Steady-State Equation for the Effective Thermal Generation/Recombination
Rate
5.3.3 Special Cases
5.3.4 Surface Generation and Recombination
Summary
Problems
Review Questions
PART II FUNDAMENTAL DEVICE STRUCTURES
6 JUNCTIONS
6.1 P-N JUNCTION PRINCIPLES
6.1.1 p-~ Junction in Thermal Equilibrium
6.1.2 Reverse-Biased P-N Junction
6.1.3 Forward-Biased P-K Junction
6.1.4 Breakdown Phenomena
6.2 DC MODEL
6.2.1 Basic Current-Voltage (I-V) Equation
6.2.2 Important Second-Order Effects
6.2.3 Temperature Effects
6.3 CAPACITA CE OF REVERSE-BIASED P-:-I JUNCTION
6.3.1 C-V Dependence
6.3.2 Depletion-Layer Width: Solving the Poisson Equation
6.3.3 SPICE Model for the Depletion-Layer Capacitance
6.4 STORED-CHARGE EFFECTS
6.4.1 Stored Charge and Transit Time
6.4.2 Relationship Between the Transit Time and the Minority-Carrier
Lifetime
6.4.3 Switching Characteristics: Reverse-Recovery Time
6.5 METAL-SEMICONDUCTOR CONTACT
6.5.1 Schottky Diode: Rectifying Metal-Semiconductor Contact
6.5.2 Ohmic Metal-Semiconductor Contacts
Summary
Problems
Review Questions
7 MOSFET
7.1 MOS CAPACITOR
7.1.1 Properties of the Gate Oxide and the Oxide-Semiconductor Interface
7.1.2 C-V Curve and the Surface-Potential Dependence on Gate Voltage
7.1.3 Energy-Band Diagrams
7.1.4 Flat4Band Capacitance and Debye Length
7.2 MOSFET PRINCIPLES
B.1.1 MOSFET Structure
7.2.2 MOSFET as a Voltage-Controlled Switch
B.1.3 The Threshold Voltage and the Body Effect
B.1.4 MOSFET as a Voltage-Controlled Current Source: Mechanisms of
Current Saturation
7.3 PRINCIPAL CURRENT-VOLTAGE CHARACTERISTICS AND EQUATIONS
7.3.1 SPICE LEVEL 1 Model
7.3.2 SPICE LEVEL 2 Model
7.3.3 SPICE LEVEL 3 Model: Principal Effects
7.4 SECO:\D-OROER EFFECTS
7.4.1 Mobility Reduction with Gate Voltage
7.4.2 Velocity Saturation (Mobility Reduction with Drain Voltage)
7.4.3 Finite Output Resistance
7.4.4 Threshold-Voltage-Related Short-Channel Effects
7.4.5 Threshold Voltage Related Narrow-Channel Effects
7.4.6 Subthreshold Current
7.5 Nanoscale MOSFETs
7.5.1 Down-Scaling Benefits and Rules
7.5.2 Leakage Currents
7.5.3 Advanced MOSFETs
7.6 MOS-BASED MEMORY DEVICES
7.6.1 1C1T DRAM Cell
7.6.2 Flash-Memory Cell
Summary
Problems
Review Questions
8 BJT
8.1 B.JT PRINCIPLES
8.1.1 BJT as a Voltage-Controlled Current Source
8.1.2 BJT Currents and Gain Definitions
8.1.3 Dependence of ? and ? Current Gains on Technological Parameters
8.1.4 The Four Modes of Operation: BJT as a Switch
8.1.5 Complementary BJT
8.1.6 BJT Versus MOSFET
8.2 PRINCIPAL CURRENT-VOLTAGE CHARACTERISTICS, EBERE-MOLL
MODEL IN SPICE
8.2.1 Injection Version
8.2.2 Transport Version
8.2.3 SPICE Version
8.3 SECOND?ORDER EFFECTS
8.3.1 Early Effect: Finite Dynamic Output Resistance
8.3.2 Parasitic Resistances
8.3.3 Dependence of Common-Emitter Current Gain on Transistor Current:
Low-Current Effects
8.3.4 Dependence of Common-Emitter Current Gain on Transistor Current:
Gummel-Poon Model for High-Current Effects
8.4 HETEROJUNCTION BIPOLAR TRANSISTOR
Summary
Problems
Review Questions
PART III SUPPLEMENTARY TOPICS
9 PHYSICS OF NANOSCALE DEVICES
9.1 SINGLE-CARRIER EVENTS
9.1.1 Beyond the Classical Principle of Continuity
9.1.2 Current-Time Form of Uncertainty Principle
9.1.3 Carrier-Supply Limit to Diffusion Current
9.1.4 Spatial Uncertainty
9.1.5 Direct Nonequilibrium Modeling of Single-Carrier Events
9.2 TWO-DIMENSIONAL TRANSPORT IN MOSFETs AND HEMTs
9.2.1 Quantum Confinement
9.2.2 HEMT Structure and Characteristics
9.2.3 Application of Classical MOSFET Equations to Two-Dimensional
Transport in MOSFETs and HEMTs
9.3 ONE-DIMENSUIONAL TRANSPORT IN NANOWIRES AND CARBON
NANOTUBES
9.3.1 Ohmic Transport in Nanowire and Carbon-Nanotube FETs
9.3.2 One-Dimensional Ballistic Transport and the Quantum Conductance
Limit
Summary
Problems
Review Questions
10 DEVICE ELECTRONICS, EQUIVALENT CIRCUITS A D SPICE
PARAMETERS
10.l DIODES
10.1.1 Static Model and Parameters in SPICE
10.1.2 Large-Signal Equivalent Circuit in SPICE
10.1.3 Parameter Measurement
10.1.4 Small-Signal Equivalent Circuit
10.2 MOSFET
10.2.1 Static Model and Parameters; LEVEL 3 in SPICE
10.2.2 Parameter Measurement
10.2.3 Large-Signal Equivalent Circuit and Dynamic Parameters in SPICE
10.2.4 Simple Digital ~1od.el
10.2.5 Small-Signal Equivalent Circuit
10.3 BJT
10.3.1 Static Model and Parameters: Ebers-Moll and Gummel-Poon Levels
in SPICE
10.3.2 Parameter Measurement
10.3.3 Large-Signal Equivalent Circuit and Dynamic Parameters in SPICE
10.3.4 Small-Signal Equivalent Circuit
Summary
Problems
Review Questions
11 PHOTONIC DEVICES
11.1 LIGHT EMITTING DIODES (LED)
11.2 PHOTODETECTORS AND SOLAR CELLS
11.2.1 Biasing for Photodetector and Solar-Cell Applications
11.2.2 Carrier Generation in Photodetectors and Solar Cells
11.2.3 Photocurrent Equation
11.3 LASERS
11.3.1 Stimulated Emission, Inversion Population, and Other Fundamental Concepts
11.3.2 A Typical Heterojunction Laser
Summary
Problems
Review Questions
12 JFET AND MESFET
12.1 JFET
12.1.1 JFET Structure
12.1.2 JFET Characteristics
12.1.3 SPICE Model and Parameters
12.2 MESFET
12.2.1 MESFET Structure
12.2.2 MESFET Characteristics
12.2.3 SPICE Model and Parameters
Summary
Problems
Review Questions
13 POWER DEVICES
13.1 POWER DIODES
13.1.1 Drift Region in Power Devices
13.1.2 Switching Characteristics
13.1.3 Schottky Diode
13.2 POWER MOSFET
13.3 IGBT
13.4 THYRISTOR
Summary
Problems
Review Questions
