Silicon Carbide
Materials, Processing & Devices
Series: Optoelectronic Properties of Semiconductors and Superlattice;
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Product details:
- Edition number 1
- Publisher CRC Press
- Date of Publication 30 October 2003
- ISBN 9781591690238
- Binding Hardback
- No. of pages416 pages
- Size 229x152 mm
- Weight 703 g
- Language English 0
Categories
Short description:
Dr. Zhe Chuan Feng received his Ph.D. from the University of Pittsburgh. He has worked both within academia and industry on semiconductor growth, process, characterization, semiconductor devices, and lasers. He is currently a Senior Research Scientist at the School of Electrical & Computer Engineering at the Georgia Institute of Technology, focusing on widegap III-Nitrides, SiC and other compound semiconductors.
Dr. Jian H. Zhao received his Ph.D. in Electrical Engineering from Carnegie Mellon University in 1988 and joined Rutgers University in the same year. He is Professor and Director of SiCLAB and his research results have been summarized in more than 110 refereed papers and over 140 conference papers and presentations, as well as four book chapters and a book titled Optical Filter Design and Analysis: A Signal Processing Approach. He holds five patents.
Long description:
This book will provide useful information to material growers and evaluators, device design and processing engineers as well as potential users of SiC technologies. This book will help identify remaining challenging issues to stimulate further investigation to realize the full potential of wide band gap SiC for optoelectronic and microelectronic applications.
MoreTable of Contents:
Preface
Chapter 1 Epitaxial growth of high-quality silicon carbide - Fundamentals and recent
progress -
-- T. Kimoto and H. Matsunami* (Kyoto University)
(1) Introduction
(2) Step-controlled Epitaxy of SiC
2.1 Chemical vapor deposition
2.2 Step-controlled epitaxy
2.3 Surface morphology
(3) Growth mechanism of step-controlled epitaxy
3.1 Rate-determining process
3.2 Off-angle dependence of growth rate
3.3 Temperature dependence of growth rate
3.4 Prediction of step-flow growth condition
3.4.1 Surface diffusion model
3.4.2 Desorption flux
3.4.3 Critical supersaturation ratio
3.4.4 Critical growth conditions
3.4.5 Surface diffusion length
3.4.6 Prediction of growth mode
(4) Behaviors of steps in SiC epitaxy
4.1 Nucleation and step motion
4.2 Step bunching
(5) Characterization of epitaxial layers
5.1 Structural characterization
5.2 Optical characterization
5.3 Electrical characterization
(6) Doping of impurities
6.1 Donor doping
6.2 Acceptor doping
(7) Recent progress
7.1 Practical epitaxial growth
7.2 Epitaxial growth on (11-20)
(8) Concludions
References
Chapter 2 Surface characterization of 6H-SiC reconstructions
-- Kian-Ping LOH, Eng-Soon TOK, and Andrew T. S. WEE*
(National University of Singapore)
1. INTRODUCTION
2. Sample preparation methods for characterization of surface reconstruction
3. Reflection High Energy Electron Diffraction (RHEED)
3.1 RHEED system set-up
3.2 RHEED analysis of surface reconstruction on 6H-SiC (0001)
3.3 6H-SiC (0001)-(1&&&180;1) reconstruction
3.4 6H-SiC (0001)-(3&&&180;3) reconstruction
3.5 6H-SiC(0001)-(6&&&215;6) reconstruction
3.6 6H-SiC(0001)-(&&&214;3&&&180;&&&214;3R ) reconstruction
3.7 1&&&180;1 graphite-R on 1&&&180;1 SiC
3.8 RHEED Rocking beam analysis
4. Scanning Tunneling Microscopy (STM)
4.1 Surface Morphological Evolution of 6H-SiC(0001)
4.2 6H-SiC (0001)-(3&&&This book explores the history and latest developments in the SiC field, with an emphasis on the properties and applications of SiC to electronics and optoelectronics.
