Semiconductor Process Reliability in Practice
Series: ELECTRONICS;
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Product details:
- Publisher McGraw Hill
- Date of Publication 16 November 2012
- ISBN 9780071754279
- Binding Hardback
- No. of pages624 pages
- Size 236x162x38 mm
- Weight 987 g
- Language English 0
Categories
Short description:
Filled with practical examples, this is a comprehensive reference on process reliability for semiconductor process and design engineers.
MoreLong description:
Publisher's Note: Products purchased from Third Party sellers are not guaranteed by the publisher for quality, authenticity, or access to any online entitlements included with the product.
Proven processes for ensuring semiconductor device reliability
Co-written by experts in the field, Semiconductor Process Reliability in Practice contains detailed descriptions and analyses of reliability and qualification for semiconductor device manufacturing and discusses the underlying physics and theory. The book covers initial specification definition, test structure design, analysis of test structure data, and final qualification of the process. Real-world examples of test structure designs to qualify front-end-of-line devices and back-end-of-line interconnects are provided in this practical, comprehensive guide.
Coverage includes:
- Basic device physics
- Process flow for MOS manufacturing
- Measurements useful for device reliability characterization
- Hot carrier injection
- Gate-oxide integrity (GOI) and time-dependentdielectric breakdown (TDDB)
- Negative bias temperature instability
- Plasma-induced damage
- Electrostatic discharge protection of integrated circuits
- Electromigration
- Stress migration
- Intermetal dielectric breakdown
Publisher's Note: Products purchased from Third Party sellers are not guaranteed by the publisher for quality, authenticity, or access to any online entitlements included with the product.
Proven processes for ensuring semiconductor device reliability
Co-written by experts in the field, Semiconductor Process Reliability in Practice contains detailed descriptions and analyses of reliability and qualification for semiconductor device manufacturing and discusses the underlying physics and theory. The book covers initial specification definition, test structure design, analysis of test structure data, and final qualification of the process. Real-world examples of test structure designs to qualify front-end-of-line devices and back-end-of-line interconnects are provided in this practical, comprehensive guide.
Coverage includes:
- Basic device physics
- Process flow for MOS manufacturing
- Measurements useful for device reliability characterization
- Hot carrier injection
- Gate-oxide integrity (GOI) and time-dependentdielectric breakdown (TDDB)
- Negative bias temperature instability
- Plasma-induced damage
- Electrostatic discharge protection of integrated circuits
- Electromigration
- Stress migration
- Intermetal dielectric breakdown
Table of Contents:
Filled with practical examples, this is a comprehensive reference on process reliability for semiconductor process and design engineers.
More