Nitride Wide Bandgap Semiconductor Material and Electronic Devices
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21 493 Ft
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Estimated delivery time: Expected time of arrival: end of January 2026.
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Product details:
- Edition number 1
- Publisher CRC Press
- Date of Publication 30 June 2020
- ISBN 9780367574369
- Binding Paperback
- No. of pages392 pages
- Size 254x178 mm
- Weight 771 g
- Language English 66
Categories
Short description:
This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs).
MoreLong description:
This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for electronic devices used in microwave power amplification, high-voltage switches, and high-speed digital integrated circuits.
MoreTable of Contents:
Nitride Wide Bandgap Semiconductor Material and Electronic Devices
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