Low-Dimensional Nitride Semiconductors
Series: Series on Semiconductor Science and Technology; 9;
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Product details:
- Publisher OUP Oxford
- Date of Publication 20 June 2002
- ISBN 9780198509745
- Binding Hardback
- No. of pages486 pages
- Size 241x163x31 mm
- Weight 977 g
- Language English
- Illustrations numerous line drawings and halftones 0
Categories
Short description:
Optoelectronics and electronics are likely to change dramatically in the future. This text, written by topmost international researchers, is dedicated to low-dimensional nitride semiconductors, and provides the key to modern electronics, opto-electronics, and nanotechnology. Low-Dimensional Nitride Semiconductors explores why nitride semiconductors are so promising over such a wide range of applications, what the current issues are in the research laboratories, and what the prospects of new electronic devices are in the dawn of the twenty-first century. Published in the Series on Semiconductor Science and Technology, with 'Group III Nitride Semiconductor Compounds' (OUP 1998).
MoreLong description:
Optoelectronics and electronics of the years to come are likely to change dramatically. Most of the outdoor lighting systems will be replaced by light-emitting diodes that operate in the whole visible part of the electromagnetic spectrum. Transistors operating at high frequency and with high power are under development and likely to hit the market very rapidly. Compact solid state lasers that operate in the near-ultraviolet range are going to be utilized for such widely used applications as read-write tasks in printers and CD drives. Ultraviolet detectors will be used at a wide scale for many applications, ranging from flame detectors to medical instruments. This book concerns itself with the questions why nitride semiconductors are so promising over such a wide range of applications, what the current issues are in the research laboratories, and what the prospects of new electronic devices are in the dawn of the twenty first century.
For the immediate future this volume will serve very well those who need to gain insights into specific aspects of nitride materials physics. The dynamic range of the contributions should ensure that most interested readers will find a viewpoint that coincides with their own requirements.
Table of Contents:
Gallium nitride or The history of a scientific explosion driven by applications and markets
Nitrides as seen by a theorist
The homoepitaxial challenge for low-dimensional nitrides
HVPE - GaN quasi-substrates for nitride device structures
Growth optimization of low-dimensional nitrides by metalorganic vapor phase epitaxy and dislocation control
The growth of low-dimensional nitrides by molecular beam epitaxy
Topological defects and low-dimensional nitride layers
Excitons in GaN-based low-dimensional systems
Indium gallium nitride
The optical properties of InGaN-based quantum wells and quantum dots
Electron-phonon interactions in GaN and its low-dimensional structures
Low-dimensional nitrides: A laboratory for ultrafast physics
Opto-electronic devices based on low-dimensional nitride heterostructures
GaN-based modulation doped FETs
Mixed III-V-N semiconductors: A challenge for tomorrow?