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  • Ion Implantation and Annealing Applications, Science and Technology: Contributions from IIT School, Edition 2024

    Ion Implantation and Annealing Applications, Science and Technology by Lerch, Wilfried; Current, Michael;

    Contributions from IIT School, Edition 2024

    Series: Topics in Applied Physics;

      • GET 12% OFF

      • Publisher's listprice EUR 246.09
      • The price is estimated because at the time of ordering we do not know what conversion rates will apply to HUF / product currency when the book arrives. In case HUF is weaker, the price increases slightly, in case HUF is stronger, the price goes lower slightly.

        96 122 Ft (91 545 Ft + 5% VAT)
      • Discount 12% (cc. 11 535 Ft off)
      • Discounted price 84 588 Ft (80 560 Ft + 5% VAT)

    84 588 Ft

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    Product details:

    • Publisher Springer Nature Switzerland
    • Date of Publication 9 June 2026

    • ISBN 9783032100078
    • Binding Hardback
    • No. of pages628 pages
    • Size 235x155 mm
    • Language English
    • Illustrations XII, 628 p. 428 illus., 80 illus. in color.
    • 700

    Categories

    Long description:

    This book compiles the insights and teachings from the 2024 IIT School lectures, offering a comprehensive look at ion implantation and annealing in semiconductor manufacturing. It covers the history of integrated circuits, common applications in CMOS technology, ion sources, radiation damage, annealing of materials like silicon (Si), silicon carbide (SiC) and gallium nitride (GaN), and advances in cluster ion beam technology. This edition, enriched by expert contributions, serves as an essential reference for students and professionals in materials science and microelectronics.

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    Table of Contents:

    Chapter 1: History of Integrated Circuits and Ion Implantation.- Chapter 2: Common Applications of Ion Implantation in CMOS Process Technology.- Chapter 3: Commercial Ion Implantation Systems.- Chapter 4: Ion Sources.- Chapter 5: Radiation Damage of Silicon.- Chapter 6: Annealing of Radiation Damage in Silicon and Silicon.-Chapter 7: New Advancement in Ion Implantation Annealing for Si, Ge, SiC and GaN.- Chapter 8: Cluster Ion Beam: History and Technology.- Chapter 9: Ion Transport and Implant Control.- Chapter 10: Ion Beam Purity and Wafer Contamination.- Chapter 11: Safety Considerations for Ion Implanters.- Chapter 12: Power Devices and New Base Materials.- Chapter 13: Special Applications of Ion Implantation in CMOS Process Technology.

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