Beyond the Desert 99
Accelerator, Non-accelerator and Space Approaches into the Next Millennium, Second International Conference on Particle Physics Beyond the Standard Model, Castle Ringberg, Germany, 6-12 June 1999
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328 965 Ft
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Estimated delivery time: In stock at the publisher, but not at Prospero's office. Delivery time approx. 3-5 weeks.
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Delivery time is estimated on our previous experiences. We give estimations only, because we order from outside Hungary, and the delivery time mainly depends on how quickly the publisher supplies the book. Faster or slower deliveries both happen, but we do our best to supply as quickly as possible.
Product details:
- Edition number 1
- Publisher CRC Press
- Date of Publication 1 January 2000
- ISBN 9780750307314
- Binding Hardback
- No. of pages1268 pages
- Size 234x156 mm
- Weight 2063 g
- Language English 0
Categories
Short description:
Addressing the need for an up-to-date reference on silicon devices and heterostructures, Beyond the Desert 99 reviews the technology used to grow and characterize Goup IV alloy films. It covers the theory, device design, and simulation of heterojunction transistors, emphasizing their relevance in developing the technologies involving strained layers; device design and simulation of conventional silicon bipolar transistors and SiGe HBTs at room and low temperatures; and device design and simulation for MOSFETs, including SiGe and strained-Si channel MOSFETs. The book concludes with simulations and examples of different applications.
MoreLong description:
Addressing the need for an up-to-date reference on silicon devices and heterostructures, Beyond the Desert 99 reviews the technology used to grow and characterize Goup IV alloy films. It covers the theory, device design, and simulation of heterojunction transistors, emphasizing their relevance in developing the technologies involving strained layers; device design and simulation of conventional silicon bipolar transistors and SiGe HBTs at room and low temperatures; and device design and simulation for MOSFETs, including SiGe and strained-Si channel MOSFETs. The book concludes with simulations and examples of different applications. It provides a unified reference for scientists and engineers investigating the use of SiGe and strained silicon in a new generation of high-speed circuit applications.
MoreTable of Contents:
Introduction. Group IV alloy layers: growth and characterization. HBT principles. Model formulation. HBT: Device design and simulation. Strained-Si heterostructure FETs. Device design and simulation. Simulation applications: examples. SiGe HBT applications. Index.
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