Amorphous and Crystalline Silicon Carbide and Related Materials
Proceedings of the First International Conference, Washington DC, December 10 and 11, 1987
Series: Springer Proceedings in Physics; 34;
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Product details:
- Publisher Springer Verlag
- Date of Publication 8 March 1989
- Number of Volumes 1 pieces Book
- ISBN 9783540507062
- Binding Hardback
- No. of pages199 pages
- Size 0x0 mm
- Weight 470 g
- Language English 0
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Long description:
Although silicon carbide has been used for more than half a century, its potential as a high-temperature, corrosion-resistant semiconductor has only recently begun to be exploited. Both crystalline and amorphous forms of SiC offer several advantages over Si, GaAs, and InP for high-frequency, high-power, and high-speed circuits. This volume contains reports on high-temperature SiC MOSFETs and MESFETs, secondary harmonic generation in SiC, a-SiC emitter heterojunction bipolar transistors, and bulk crystal growth of 6H-SiC. For newcomers to the field it provides an up-to-date review of technological developments in SiC and related materials, while specialists will find here recent references and new insights into materials for high-temperature, high-power, and high-speed circuit applications.
Although silicon carbide has been used for more than half a century, its potential as a high-temperature, corrosion-resistant semiconductor has only recently begun to be exploited. Both crystalline and amorphous forms of SiC offer several advantages over Si, GaAs, and InP for high-frequency, high-power, and high-speed circuits. This volume contains reports on high-temperature SiC MOSFETs and MESFETs, secondary harmonic generation in SiC, a-SiC emitter heterojunction bipolar transistors, and bulk crystal growth of 6H-SiC. For newcomers to the field it provides an up-to-date review of technological developments in SiC and related materials, while specialists will find here recent references and new insights into materials for high-temperature, high-power, and high-speed circuit applications.
Table of Contents:
I Growth of Crystalline Silicon Carbide.- Recent Developments in SiC (USA).- 6H-SiC Studies and Developments at the Corporate Research Laboratory of Siemens AG and the Institute for Applied Physics of the University in Erlangen (FRG).- VPE Growth of SiC on Step-Controlled Substrates.- Growth of ?-SiC Heteroepitaxial Films on Vicinal (001) Si Substrates.- Epitaxial Growth of 3C-SiC on a Si Substrate Using Methyltrichlorosilane.- A Mechanism and Kinetics for Silicon Carbide Growth.- Mechanisms of Epitaxial Growth of ?-SiC on Silicon Substrate by Chemical Vapor Deposition and Nucleation of Defects.- II Growth of Amorphous Silieon Carbide.- Present and Future Applications of Amorphous Silicon Carbide.- Fabrication of a-Si:H/a-SiC:H Multilayers by a Glow Discharge Method and Carrier Transport Properties.- Highly Photosensitive a-SiC:H Films Prepared at High Deposition Rate by Glow Discharge in SiH4-C2H2 Mixture Gas.- A Novel L-Coupled RF PECVD System for Large-Area Deposition of a-SiC:H for Device Applications.- III Characterization of Silicon Carbide.- Donor Identification in Thin Film Cubic SiC.- SiC Production Chemistry from Olefinic Hydrocarbons on Si(100).- Surface Structures of ?-SiC, 6H-SiC and Pseudomorphic Si Adlayers.- Study of the Origin of Residual Carriers in CVD-Grown 3C-SiC by Photoluminescence and Electron Spin Resonance.- Phase Matched Second Harmonic Conversion in ?-SiC.- Gamma-Ray Irradiation Effects on 3C-SiC Devices.- The Measurement of Stress in Silicon Carbide Using the Photoelastic Effect.- Effect of Surface Modifications of Cubic SiC on Metallization Interactions.- Amorphous Silicon Carbide Thin Films Produced in the Glow Discharge Deposition System.- Preparation and Properties of Polycrystalline Silicon Carbide Films Produced by Plasma Enhanced Chemical Vapor Deposition, and Their Applications.- IV Silicon Carbide Processing and Device Applications.- Study on Current Gain Degradation in Amorphous SiC Emitter HBT.- Investigations of Stability of a-SiC Under Heat Treatment During Device Fabrication.- Heterojunction Band Discontinuities in Crystalline Silicon/Amorphous Compound Heterojunctions.- Amorphous Silicon Solar Cells Using a-SiC Materials.- Au-Ni Contacts on ?-SiC Films.- Epitaxial Growth, High Temperature Ion Implantation and MOSFET Fabrication in Monocrystalline ?-SiC Thin Films.- Plasma-Assisted Chemical Vapor Deposition of Cubic Silicon Carbide on Silicon Substrate.- Reactive Ion Etching for SiC Device Fabrication.- Index of Contributors.
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Amorphous and Crystalline Silicon Carbide and Related Materials: Proceedings of the First International Conference, Washington DC, December 10 and 11, 1987
35 481 HUF
32 643 HUF
