Advanced Field-Effect Transistors
Theory and Applications
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23 882 Ft (22 745 Ft + 5% VAT)
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23 882 Ft
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Product details:
- Edition number 1
- Publisher CRC Press
- Date of Publication 26 December 2025
- ISBN 9781032493879
- Binding Paperback
- No. of pages306 pages
- Size 234x156 mm
- Language English
- Illustrations 242 Illustrations, black & white; 6 Halftones, black & white; 236 Line drawings, black & white; 18 Tables, black & white 700
Categories
Short description:
The book addresses the fundamental physics behind the operation of various FETs, as well as challenges and solutions with the FETs for the device to circuit level design and simulation. This book will provide an overview of new semiconductor devices and their applicability in electronic circuit design.
MoreLong description:
Advanced Field-Effect Transistors: Theory and Applications offers a fresh perspective on the design and analysis of advanced field-effect transistor (FET) devices and their applications. The text emphasizes both fundamental and new paradigms that are essential for upcoming advancement in the field of transistors beyond complementary metal–oxide–semiconductors (CMOS). This book uses lucid, intuitive language to gradually increase the comprehension of readers about the key concepts of FETs, including their theory and applications.
In order to improve readers’ learning opportunities, Advanced Field-Effect Transistors: Theory and Applications presents a wide range of crucial topics:
- Design and challenges in tunneling FETs
- Various modeling approaches for FETs
- Study of organic thin-film transistors
- Biosensing applications of FETs
- Implementation of memory and logic gates with FETs
The advent of low-power semiconductor devices and related implications for upcoming technology nodes provide valuable insight into low-power devices and their applicability in wireless, biosensing, and circuit aspects. As a result, researchers are constantly looking for new semiconductor devices to meet consumer demand. This book gives more details about all aspects of the low-power technology, including ongoing and prospective circumstances with fundamentals of FET devices as well as sophisticated low-power applications.
MoreTable of Contents:
1. Future Prospective beyond CMOS Technology: From Silicon-based devices to alternate devices. 2. Design and Challenges in Tunnel FET. 3. Modelling Approaches to Field Effect Transistor. 4. Dynamics of Trap States in Organic Thin-Film Transistors (OTFT’s). 5. An Insightful Study and Investigation of Tunnel FET and its Application in the Biosensing Domain. 6. Optimization of Hetero buried Oxide Pocket doped Gate engineered Tunnel FET structure. 7. Comprehensive Analysis of NC-L-TFET. 8. Thermal Behavior of Si-doped MoS2 based Step Structure DG-TFET. 9. Implementation of Logic gates using Step-Channel TFET. 10. CMOS-based SRAM with Odd Transistors Configuration: An Extensive Study. 11. Gate-All-Around Nanosheet FET device simulation methodology using Sentaurus TCAD. 12. Device Simulation process on TCAD
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