Principles of Semiconductor Devices
Series: The Oxford Series in Electrical and Computer Engineering;
- Publisher's listprice GBP 218.99
-
104 622 Ft (99 640 Ft + 5% VAT)
The price is estimated because at the time of ordering we do not know what conversion rates will apply to HUF / product currency when the book arrives. In case HUF is weaker, the price increases slightly, in case HUF is stronger, the price goes lower slightly.
- Discount 10% (cc. 10 462 Ft off)
- Discounted price 94 160 Ft (89 676 Ft + 5% VAT)
Subcribe now and take benefit of a favourable price.
Subscribe
104 622 Ft
Availability
printed on demand
Why don't you give exact delivery time?
Delivery time is estimated on our previous experiences. We give estimations only, because we order from outside Hungary, and the delivery time mainly depends on how quickly the publisher supplies the book. Faster or slower deliveries both happen, but we do our best to supply as quickly as possible.
Product details:
- Edition number 2
- Publisher OUP USA
- Date of Publication 31 March 2011
- ISBN 9780195388039
- Binding Hardback
- No. of pages640 pages
- Size 236x191x27 mm
- Weight 1202 g
- Language English 0
Categories
Short description:
Designed for upper-level undergraduate and graduate courses, Principles of Semiconductor Devices, Second Edition, presents the semiconductor-physics and device principles in a way that upgrades classical semiconductor theory and enables proper interpretations of numerous quantum effects in modern devices. The semiconductor theory is directly linked to practical applications, including the links to the SPICE models and parameters that are commonly used during circuit design.
MoreLong description:
The dimensions of modern semiconductor devices are reduced to the point where classical semiconductor theory, including the concepts of continuous particle concentration and continuous current, becomes questionable. Further questions relate to two-dimensional transport in the most important field-effect devices and one-dimensional transport in nanowires and carbon nanotubes.
Designed for upper-level undergraduate and graduate courses, Principles of Semiconductor Devices, Second Edition, presents the semiconductor-physics and device principles in a way that upgrades classical semiconductor theory and enables proper interpretations of numerous quantum effects in modern devices. The semiconductor theory is directly linked to practical applications, including the links to the SPICE models and parameters that are commonly used during circuit design.
The text is divided into three parts: Part I explains semiconductor physics; Part II presents the principles of operation and modeling of the fundamental junctions and transistors; and Part III provides supplementary topics, including a dedicated chapter on the physics of nanoscale devices, description of the SPICE models and equivalent circuits that are needed for circuit design, introductions to the most important specific devices (photonic devices, JFETs and MESFETs, negative-resistance diodes, and power devices), and an overview of integrated-circuit technologies. The chapters and the sections in each chapter are organized so as to enable instructors to select more rigorous and design-related topics as they see fit.
New to this Edition
* A new chapter on the physics of nanoscale devices
* A revised chapter on the energy-band model and fully reworked and updated material on crystals to include graphene and carbon nanotubes
* A revised P-N junction chapter to emphasize the current mechanisms that are relevant to modern devices
* JFETs and MESFETs in a stand-alone chapter
* Fifty-seven new problems and eleven new examples
Table of Contents:
Contents
PART I INTRODUCTION TO SEMICONDUCTORS
lNTRODUCTION TO CRYSTALS AND CURRENT CARRIERS
IN SEMICONDUCTORS, THE ATOMIC-BOND MODEL
1.1 INTRODUCTION TO CRYSTALS
1.1.1 Atomic Bonds
1.1.2 Three-Dimensional Crystals
1.1.3 Two-Dimensional Crystals: Graphene and Carbon Nanotubes
1.2 CURRENT CARRIERS
1.2.1 Two Types of Current Carriers in Semiconductors
1.2.2 N·Type and P-Type Doping
1.2.3 Electroneutrality Equation
1.2.4 Electron and Hole Generation and Recombination in Thermal Equilibrium
1.3 BASICS OF CRYSTAL GROWTH AND DOPING TECHNIQUES
1.3.1 Crystal-Growth Techniques
1.3.2 Doping Techniques
Summary
Problems
Review Questions
THE ENERGY-BAND MODEL
2.1 ELECTRONS AS WAVES
2.1.1 De Broglie Relationship Between Particle and Wave Properties
2.1.2 Wave Function and Wave Packet
2.1.3 Schrodinger Equation
2.2 ENERGY LEVELS IN ATOMS AND ENERGY BANDS IN CRYSTALS
2.2.1 Atomic Structure
2.2.2 Energy Bands in Metals
2.2.3 Energy Gap and Energy Bands in Semiconductors and Insulators
12.3 ELECTRONS AND HOLES AS PARTICLES
2.3.1 Effective Mass and Real E-k Diagrams
2.3.2 The Question of Electron Size: The Uncertainty Principle
2.3.3 Density of Electron States
2.4 POPULATION OF ELECTRON STATES, CONCENTRATIONS OF
ELECTRONS A:"D HOLES
2.4.1 Fermi-Dirac Distribution
2.4.2 Maxwell-Boltzmann Approximation and Effective Density of States
2.4.3 Fermi Potential and Doping
2.4.4 Nonequilibrium Carrier Concentrations and Quasi-Fermi Levels
Summary
Problems
Review Questions
DRIFT 3.1 ENERGY BANDS WITH APPLIED ELECTRIC FIELD
3.1.1 Energy-Band Presentation of Drift Current
3.1.2 Resistance and Power Dissipation due to Carrier Scattering
3.2 OHM'S LAW, SHEET RESISTANCE, AND CONDUCTIVITY
3.2.1 Designing Integrated-Circuit Resistors
3.2.2 Differential Form of Ohm's Law
3.2.3 Conductivity Ingredients
3.3 CARRIER MOBILITY
3.3.1 Thermal and Drift Velocities
3.3.2 Mobility Definition
3.3.3 Scattering Time and Scattering Cross Section
3.3.4 Mathieson's Rule
°3.3.5 Hall Effect
Summary
Problems
Review Questions
DlFFUSION
4.1 DIFFUSION-CURRENT EQUATION
4.2 DIFFUSION COEFFICIENT
4.2.1 Einstein Relationship
L4.2.2 Haynes-Shockley Experiment
4.2.3 Arrhenius Equation
4.3 BASIC CONTINUITY EQUATION
Summary
Problems
Review Questions
GENERATION AND RECOMBINATION
5.1 GENERATION AND RECOMBINATION MECHANISMS
5.2 GENERAL FORM OF THE CONTINUITY EQUATION
5.2.1 Recombination and Generation Rates
5.2.2 Minority-Carrier Lifetime
5.2.3 Diffusion Length
5.3 GENERATION AND RECOMBINATION PHYSICS AND SHOCKLEYREAD-
HALL (SRH) THEORY
5.3.1 Capture and Emission Rates in Thermal Equilibrium
5.3.2 Steady-State Equation for the Effective Thermal Generation/Recombination Rate
5.3.3 Special Cases
5.3.4 Surface Generation and Recombination
Summary
Problems
Review Questions
PART II FUNDAMENTAL DEVICE STRUCTURES
P-N JUNCTION
6.1 P-N JUNCTION PRINCIPLES
6.1.1 P-N Junction in Thermal Equilibrium
6.1.2 Reverse-Biased P-N Junction
6.1.3 Forward-Biased P-N Junction
6.1.4 Breakdown Phenomena
6.2 DC MODEL
6.2.1 Basic Current-Voltage (I-V) Equation
6.2.2 Important Second-Order Effects
6.2.3 Temperature Effects
6.3 CAPACITANCE OF REVERSE-BIASED P-N JUNCTION
6.3.1 C-V Dependence
6.3.2 Depletion-Layer Width: Solving the Poisson Equation
6.3.3 SPICE Model for the Depletion-Layer Capacitance
6.4 STORED-CHARGE EFFECTS
6.4.1 Stored Charge and Transit Time
6.4.2 Relationship Between the Transit Time and the Minority-Carrier Lifetime
6.4.3 Switching Characteristics: Reverse-Recovery Time
Summary
Problems
Review Questions
METAL-SEMICONDUCTOR CONTACT AND MOS CAPACITOR
7.1 METAL-SEMICONDUCTOR CONTACT
7.1.1 Schottky Diode: Rectifying Metal-Semiconductor Contact
7.1.2 Ohmic Metal-Semiconductor Contacts
7.2 MOS CAPACITOR
7.2.1 Properties of the Gate Oxide and the Oxide-Semiconductor Interface
7.2.2 C-V Curve and the Surface-Potential Dependence on Gate Voltage
7.2.3 Energy-Band Diagrams
·7.2.4 Flat-Band Capacitance and Debye Length
Summary
Problems
Review Questions
MOSFET
8.1 MOSFET PRINCIPLES
B.1.1 MOSFET Structure
8.1.2 MOSFET as a Voltage-Controlled Switch
B.1.3 The Threshold Voltage and the Body Effect
B.1.4 MOSFET as a Voltage-Controlled Current Source: Mechanisms of Current Saturation
8.2 PRINCIPAL CURRENT-VOLTAGE CHARACTERISTICS AND EQUATIONS
8.2.1 SPICE LEVEL 1 Model
8.2.2 SPICE LEVEL 2 Model
8.2.3 SPICE LEVEL 3 Model: Principal Effects
8.3 SECOND-ORDER EFFECTS
8.3.1 Mobility Reduction with Gate Voltage
8.3.2 Velocity Saturation (Mobility Reduction with Drain Voltage)
8.3.3 Finite Output Resistance
8.3.4 Threshold-Voltage-Related Short-Channel Effects
8.3.5 Threshold Voltage Related Narrow-Channel Effects
8.3.6 Subthreshold Current
8.4 Nanoscale MOSFETs
8.4.1 Down-Scaling Benefits and Rules
8.4.2 Leakage Currents
8.4.3 Advanced MOSFETs
8.5 MOS-BASED MEMORY DEVICES
8.5.1 1C1T DRAM Cell
8.5.2 Flash-Memory Cell
Summary
Problems
Review Questions
BJT
9.1 B.JT PRINCIPLES
9.1.1 BJT as a Voltage-Controlled Current Source
9.1.2 BJT Currents and Gain Definitions
9.1.3 Dependence of a and ß Current Gains on Technological Parameters
9.1.4 The Four Modes of Operation: BJT as a Switch
9.1.5 Complementary BJT
9.1.6 BJT Versus MOSFET
9.2 PRINCIPAL CURRENT-VOLTAGE CHARACTERISTICS, EBERE-MOLL
MODEL IN SPICE
9.2.1 Injection Version
9.2.2 Transport Version
9.2.3 SPICE Version
9.3 SECOND·ORDER EFFECTS
9.3.1 Early Effect: Finite Dynamic Output Resistance
9.3.2 Parasitic Resistances
9.3.3 Dependence of Common-Emitter Current Gain on Transistor Current: Low-Current Effects
9.3.4 Dependence of Common-Emitter Current Gain on Transistor Current: Gummel-Poon Model for High-Current Effects
9.4 HETEROJUNCTION BIPOLAR TRANSISTOR
Summary
Problems
Review Questions
PART III SUPPLEMENTARY TOPICS
PHYSICS OF NANOSCALE DEVICES
10.1 SINGLE-CARRIER EVENTS
10.1.1 Beyond the Classical Principle of Continuity
10.1.2 Current-Time Form of Uncertainty Principle
10.1.3 Carrier-Supply Limit to Diffusion Current
10.1.4 Spatial Uncertainty
10.1.5 Direct Nonequilibrium Modeling of Single-Carrier Events
10.2 TWO-DIMENSIONAL TRANSPORT IN MOSFETs AND HEMTs
10.2.1 Quantum Confinement
10.2.2 HEMT Structure and Characteristics
10.2.3 Application of Classical MOSFET Equations to Two-Dimensional
Transport in MOSFETs and HEMTs
10.3 ONE-DIMENSUIONAL TRANSPORT IN NANOWIRES AND CARBON
NANOTUBES
10.3.1 Ohmic Transport in Nanowire and Carbon-Nanotube FETs
10.3.2 One-Dimensional Ballistic Transport and the Quantum Conductance
Limit
Summary
Problems
Review Questions
DEVICE ELECTRONICS, EQUIVALENT CIRCUITS A D SPICE
PARAMETERS
11.1 DIODES
11.1.1 Static Model and Parameters in SPICE
11.1.2 Large-Signal Equivalent Circuit in SPICE
11.1.3 Parameter Measurement
11.1.4 Small-Signal Equivalent Circuit
ll.2 MOSFET
11.2.1 Static Model and Parameters; LEVEL 3 in SPICE
11.2.2 Parameter Measurement
11.2.3 Large-Signal Equivalent Circuit and Dynamic Parameters in SPICE
11.2.4 Simple Digital Model
11.2.5 Small-Signal Equivalent Circuit
11.3 BJT
11.3.1 Static Model and Parameters: Ebers-Moll and Gummel-Poon Levels
in SPICE
11.3.2 Parameter Measurement
11.3.3 Large-Signal Equivalent Circuit and Dynamic Parameters in SPICE
11.3.4 Small-Signal Equivalent Circuit
Summary
Problems
Review Questions
PHOTONIC DEVICES
12.1 LIGHT EMITTING DIODES (LED)
12.2 PHOTODETECTORS AND SOLAR CELLS
12.2.1 Biasing for Photodetector and Solar-Cell Applications
12.2.2 Carrier Generation in Photodetectors and Solar Cells
12.2.3 Photocurrent Equation
12.3 LASERS
12.3.1 Stimulated Emission, Inversion Population, and Other Fundamental Concepts
12.3.2 A Typical Heterojunction Laser
Summary
Problems
Review Questions
JFET AND MESFET
13.1 JFET
13.1.1 JFET Structure
13.1.2 JFET Characteristics
13.1.3 SPICE Model and Parameters
13.2 MESFET
13.2.1 MESFET Structure
13.2.2 MESFET Characteristics
13.2.3 SPICE Model and Parameters
Summary
Problems
Review Questions
POWER DEVICES
14.1 POWER DIODES
14.1.1 Drift Region in Power Devices
14.1.2 Switching Characteristics
14.1.3 Schottky Diode
14.2 POWER MOSFET
14.3 IGBT
14.4 THYRISTOR
Summary
Problems
Review Questions
NEGATIVE RESISTANCE DIODES
15.1 AMPLIFICATION AND OSCILLATION BY NEGATIVE DYNAMIC
RESISTANCE
15.2 GUNN DIODE
15.3 IMPATT DIODE
15.4 TUNNEL DIODE
Summary
Problems
Review Questions
INTEGRATED-CIRCUIT TECHNOLOGIES
16.1 A DIODE IN IC TECHNOLOGY
16.1.1 Basic Structure
16.1.2 Lithography
16.1.3 Process Sequence
16.1.4 Diffusion Profiles
16.2 MOSFET TECHNOLOGIES
16.2.1 Local Oxidation of Silicon (LOCOS)
16.2.2 NMOS Technology
16.2.3 Basic CMOS Technology
16.2.4 Silicon-on-Insulator (SOl) Technology
16.3 BIPOLAR IC TECHNOLOGIES
16.3.1 IC Structure of NPN BJT
16.3.2 Standard Bipolar Technology Process
16.3.3 Implementation of PNP BJTs, Resistors, Capacitors, and Diodes
16.3.4 Parasitic IC Elements not Included in Device Models
16.3.5 Layer Merging
16.3.6 BiCMOS Technology
Summary
Problems
Review Questions
