Operation and Modelling of the MOS Transistor
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Product details:
- Edition number 2
- Publisher Oxford University Press
- Date of Publication 4 September 2003
- ISBN 9780195170146
- Binding Hardback
- No. of pages640 pages
- Size 241x187x34 mm
- Weight 1179 g
- Language English
- Illustrations Numerous line figures 0
Categories
Short description:
This is a textbook for advanced semiconductor and microelectronic chip design course that follow the course where Allen/Holberg is used. It provides unified treatment of the operation and modelling of the MOS transistor.
MoreTable of Contents:
1. Semiconductors, Junctions and MOFSET Overview
2. The Two-Terminal MOS Structure
3. The Three-Terminal MOS Structure
4. The Four-terminal MOS Structure
5. MOS Transistors with Ion-Implanted Channels
6. Small-Dimension Effects
7. The MOS Transistor in Dynamic Operation - Large-Signal Modeling
8. Small-Signal Modeling for Low and Medium Frequencies
9. High-Frequency Small-Signal Models
10.MOFSET Modeling for Circuit Simulation
