Microscopy of Semiconducting Materials
1999 Proceedings of the Institute of Physics Conference held 22-25 March 1999, University of Oxford, UK
Series: Institute of Physics Conference Series; 164;
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Product details:
- Edition number 1
- Publisher CRC Press
- Date of Publication 1 January 2000
- ISBN 9780750306508
- Binding Hardback
- No. of pages772 pages
- Size 234x156 mm
- Weight 1428 g
- Language English 0
Categories
Short description:
Microscopy of Semiconducting Materials provides an overview of advances in semiconductor studies using microscopy. This authoritative reference explores the use of transmission and scanning electron microscopy, ultrafine electron probes, and EELS to investigate semiconducting structures. It also covers specimen preparation using focused ion beam milling and advances in microscopy techniques using different types of scanning probes, such as AFM, STM, and SCM. In addition, the volume discusses a range of materials, from finished devices to partly processed materials and structures, including nanoscale wires and dots.
MoreLong description:
With IC technology continuing to advance, the analysis of very small structures remains critically important. Microscopy of Semiconducting Materials provides an overview of advances in semiconductor studies using microscopy. The book explores the use of transmission and scanning electron microscopy, ultrafine electron probes, and EELS to investigate semiconducting structures. It also covers specimen preparation using focused ion beam milling and advances in microscopy techniques using different types of scanning probes, such as AFM, STM, and SCM. In addition, the book discusses a range of materials, from finished devices to partly processed materials and structures, including nanoscale wires and dots.
This volume provides an authoritative reference for all academics and researchers in materials science, electrical and electronic engineering and instrumentation, and condensed matter physics.
Table of Contents:
High resolution microscopy and microanalysis (10 papers). Dislocations and boundaries (9 papers). Self-organized and quantum domain structures (14 papers) . Epitaxy-growth phenomena (22 papers). Epitaxy-defect formation (16 papers). Epitaxy-wide band-gap nitrides (20 papers). Processed silicon and related materials (24 papers). Metallization, silicides and contacts (9 papers). Device studies and specimen preparation (7 papers). Scanning probe microscopy (6 papers). Advanced scanning electron and optical microscopy (20 papers).
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