
Electronic Materials Innovations and Reliability in Advanced Memory Packaging
Series: Springer Series in Reliability Engineering;
- Publisher's listprice EUR 160.49
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Product details:
- Publisher Springer
- Date of Publication 16 August 2025
- Number of Volumes 1 pieces, Book
- ISBN 9783031947940
- Binding Hardback
- No. of pages207 pages
- Size 235x155 mm
- Language English
- Illustrations 2 Illustrations, black & white; 57 Illustrations, color 700
Categories
Short description:
This book provides a comprehensive introduction the reliability, and electronic materials innovations in advanced memory device packaging from component to system level. Special features of this book are sections covering not only the advanced packaging materials, but also system level packaging and integration in memory modules and solid state drives (SSD).
The book is an extremely useful and applicable guide to professionals and students on materials reliability in memory device packaging - from component to system level.
MoreLong description:
This book provides a comprehensive introduction the reliability, and electronic materials innovations in advanced memory device packaging from component to system level. Special features of this book are sections covering not only the advanced packaging materials, but also system level packaging and integration in memory modules and solid state drives (SSD).
The book is an extremely useful and applicable guide to professionals and students on materials reliability in memory device packaging - from component to system level.
MoreTable of Contents:
Influences of Electronic Materials Properties on Packaging Reliability.- Mechanical and Thermal Stress of Encapsulant and New Materials in Memory Packaging.- Materials Development for Future Data Center Applications.- Advanced Chiplets and Heterogenous Integration in Memory Device Packaging.- Hybrid Bonding Device Packaging.- Hardware Reliability for Memory Modules and SSDs.- Innovative Sustainable Electronics Materials in Advanced Memory Packaging.- PCB and Substrate in Future Memory Applications.
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