Electronic Materials and Devices
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Product details:
- Publisher Elsevier Science
- Date of Publication 22 August 2001
- ISBN 9780122541612
- Binding Hardback
- No. of pages432 pages
- Size 228x152 mm
- Weight 700 g
- Language English 0
Categories
Long description:
This book provides the knowledge and understanding necessary to comprehend the operation of individual electronic devices that are found in modern micro-electronics. As a textbook, it is aimed at the third-year undergraduate curriculum in electrical engineering, in which the physical electronic properties are used to develop an introductory understanding to the semiconductor devices used in modern micro-electronics.
The emphasis of the book is on providing detailed physical insight into the microscopic mechanisms that form the cornerstone for these technologies. Mathematical treatments are therefore kept to the minimum level necessary to achieve suitable rigor.
Table of Contents:
Preface
1. Introduction
1.1 Modern VLSI
1.2 The Driving Forces for Continued Integration Growth
1.3 Moore's Law
1.4 Types of Materials
References
2. The Crystalline Nature of Materials
2.1 The Various States of Matter
2.2 Space Lattices
2.3 Crystalline Directions
2.4 X-Ray Diffraction
References
Problems
3. The Wave Mechanics of Electrons
3.1 The Photoelectric Effect
3.2 Electrons as Waves
3.3 The Schrï¿1⁄2dinger Equation
3.4 Some Simple Potentials
3.5 Tunneling Through Barriers
3.6 Quantum Wells
3.7 The Particle in a Box
3.8 Atomic Energy Levels
References
Problems
4. Semiconductors
4.1 Periodic Potentials
4.2 Bloch's Theorem and Brillouin Zones
4.3 The Kronig-Penney Model
4.4 Nearest-Neighbor Coupling-The Tight-Binding Approach
4.5 Three Dimensions and the Band Structure for Si and GaAs
4.6 Effective Mass of the Electron
4.7 Alloys and Heterostructures
4.8 The Atoms in Motion
4.9 Types of Materials
Problems
5. Electrical Transport
5.1 Fermi-Dirac Statistics
5.2 Intrinsic Semiconductors
5.3 Extrinsic Semiconductors
5.4 Electrical Conductivity
5.5 Conductivity in a Magnetic Field
5.5.1 Low Magnetic Field
5.5.2 High Magnetic Field
5.5.3 The Quantum Hall Effect
5.6 Majority and Minority Carriers
5.7 Lifetimes, Recombination, and the Diffusion Equation
5.8 The Work Function
References
Problems
6. Semiconductor Devices
6.1 The p-n Junction
6.1.1 Electrostatics of the p-n Junction
6.1.2 Current Flow in p-n Junctions
6.1.3 Diodes Under Large Reverse Bias
6.2 The Bipolar Transistor
6.2.1 Current Flow in the BJT
6.2.2 The Current Gain a
6.3 The Metal-Semiconductor Junction
6.4 The Schottky-Gate Transistor
6.5 The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET)
6.5.1 The MOS Structure and the Surface Channel
6.5.2 The MOSFET Characteristics
6.6 The High-Electron-Mobility Transistor
6.7 Complementary MOS Structures
6.7.1 The Complementary Circuit
6.7.2 The DRAM Cell
References
Problems
7. Dielectric Material
7.1 Dielectric Effects
7.1.1 Lattice Polarization
7.1.2 Electronic Polarizability
7.2 Piezoelectric Effects
7.3 Ferroelectric Material
7.4 Pyroelectric Effects
7.5 Micro-Electro-Mechanical Structures
References
Problems
8. Optoelectronics
8.1 Photo-Detection Devices
8.1.1 Photoconductivity
8.1.2 Transverse Photo-Voltage
8.1.3 Pyroelectric Detectors
8.1.4 Photo-Diodes
8.2 Spontaneous and Stimulated Emission
8.3 Lasers
8.4 Semiconductor Lasers
Problems
9. Magnetic Materials
9.1 Magnetic Susceptibility
9.2 Diamagnetism
9.3 Paramagnetism
9.4 Ferromagnetism
9.5 Giant Magnetoresistance
9.6 Magnetic Memory
References
Problems
10. Superconductivity
10.1 Properties of Superconductors
10.2 The Meissner Effect
10.3 The London Equations
10.4 The BCS Theory
10.5 Superconducting Tunneling
10.6 High-Tc Materials
References
Problems
Appendices
A. The Hydrogen Atom
A.1 Separation of the Angular Equation
A.2 The Radial Equation
B. Impurity Insertion
B.1 Impurity Diffusion
B.2 Ion Implantation
C. Semiconductor Properties
D. Some Fundamental Constants
Index
