Defect Recognition and Image Processing in Semiconductors 1997
Proceedings of the seventh conference on Defect Recognition and Image Processing, Berlin, September 1997
Series: Institute of Physics Conference Series; 160;
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Product details:
- Edition number 1
- Publisher CRC Press
- Date of Publication 1 January 1998
- ISBN 9780750305006
- Binding Hardback
- No. of pages524 pages
- Size 234x156 mm
- Weight 975 g
- Language English 0
Categories
Short description:
This book provides a valuable overview of current techniques used to assess, monitor, and characterize defects from the atomic scale to inhomogeneities in complete silicon wafers. It addresses advances in defect analyzing techniques and instrumentation and their application to substrates, epilayers, and devices. The book discusses the merits and limits of characterization techniques; standardization; correlations between defects and device performance, including degradation and failure analysis; and the adaptation and application of standard characterization techniques to new materials. This volume also examines the impressive advances made possible by the increase in the number of nanoscale scanning techniques now available.
MoreLong description:
Defect Recognition and Image Processing in Semiconductors 1997 provides a valuable overview of current techniques used to assess, monitor, and characterize defects from the atomic scale to inhomogeneities in complete silicon wafers. This volume addresses advances in defect analyzing techniques and instrumentation and their application to substrates, epilayers, and devices. The book discusses the merits and limits of characterization techniques; standardization; correlations between defects and device performance, including degradation and failure analysis; and the adaptation and application of standard characterization techniques to new materials. It also examines the impressive advances made possible by the increase in the number of nanoscale scanning techniques now available. The book investigates defects in layers and devices, and examines the problems that have arisen in characterizing gallium nitride and silicon carbide.
listed in SPIE-OE Reports No 174, 1998
listed in Scitech Book News, September 1998
Abstracted in INSPEC Database.
in SPIE-OE Reports No 174, 1998
listed in Scitech Book News, September 1998
Abstracted in INSPEC Database.
Table of Contents:
Preface. Glossary. Nanoscanning (9 papers). Electron beam methods (9 papers). Optical methods (8 papers). Mapping (10 papers). X-ray methods (4 papers). Other and combined methods (8 papers). Image processing. Standardization. Si and SiGe mixed crystals (15 papers). SiC (3 papers). GaN (6 papers). Other III-V compounds (12 papers). II-VI compounds, phosphors, oxides and alternative substrates (4 papers). Processing and defects (3 papers). Defect recognition in devices and degradation (11 papers). Author and subject indices.
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