Applications of Silicon-Germanium Heterostructure Devices
Series: Series in Optics and Optoelectronics; 0;
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Estimated delivery time: In stock at the publisher, but not at Prospero's office. Delivery time approx. 3-5 weeks.
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Product details:
- Edition number 1
- Publisher CRC Press
- Date of Publication 20 July 2001
- ISBN 9780750307239
- Binding Hardback
- No. of pages414 pages
- Size 234x156 mm
- Weight 839 g
- Language English 0
Categories
Short description:
Combining technology, device design and simulation, and applications, this book is the first to deal with the design and optimization of transistors made from strained layers. Topics include background theory of the HBT, device simulation that predicts the optimum HBT device structure for a particular application, compact SiGe-HBT models for RF applications and the SPICE parameter extraction, and the enhancement of the high-frequency performance of HFETs using MOSFET or MODFET structures. The book also covers the design and application of optoelectronic devices and assesses how SiGe technology competes with other alternative technologies in the RF wireless communications marketplace.
MoreLong description:
The first book to deal with the design and optimization of transistors made from strained layers, Applications of Silicon-Germanium Heterostructure Devices combines three distinct topics-technology, device design and simulation, and applications-in a comprehensive way. Important aspects of the book include key technology issues for the growth of strained layers, background theory of the HBT, how device simulation can be used to predict the optimum HBT device structure for a particular application such as cryogenics, compact SiGe-HBT models for RF applications and the SPICE parameter extraction, and strategies for the enhancement of the high-frequency performance of heterojunction field effect transistors (HFETs) using MOSFET or MODFET structures. The book also covers the design and application of optoelectronic devices and assesses how SiGe technology competes with other alternative technologies in the RF wireless communications marketplace.
"The authors have certainly identified a gap in the literature ? Overall, the book is very informative and provides a strong foundation for work in this active research area."
-K. Alan Shore, Optics and Photonics News
Table of Contents:
Introduction. Film Growth and Material Parameters. Principles of SiGe-HBTs. Design of SiGe-HBTs. Simulation of SiGe-HBTs. Strained-Si Heterostructure FETs. SiGe Heterostructure Schottky Diodes. SiGe Optoelectronic Devices. RF Applications of SiGe-HBTs
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