Silicon Carbide 2008 - Materials, Processing and Devices: Volume 1069
Series: MRS Proceedings;
- Publisher's listprice GBP 81.99
-
41 495 Ft (39 519 Ft + 5% VAT)
The price is estimated because at the time of ordering we do not know what conversion rates will apply to HUF / product currency when the book arrives. In case HUF is weaker, the price increases slightly, in case HUF is stronger, the price goes lower slightly.
- Discount 10% (cc. 4 150 Ft off)
- Discounted price 37 345 Ft (35 567 Ft + 5% VAT)
41 495 Ft
Availability
Estimated delivery time: In stock at the publisher, but not at Prospero's office. Delivery time approx. 3-5 weeks.
Not in stock at Prospero.
Why don't you give exact delivery time?
Delivery time is estimated on our previous experiences. We give estimations only, because we order from outside Hungary, and the delivery time mainly depends on how quickly the publisher supplies the book. Faster or slower deliveries both happen, but we do our best to supply as quickly as possible.
Product details:
- Publisher Cambridge University Press
- Date of Publication 31 July 2008
- ISBN 9781605110394
- Binding Hardback
- No. of pages283 pages
- Size 228x152 mm
- Weight 518 g
- Language English 0
Categories
Short description:
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
MoreLong description:
Silicon carbide (SiC) is a robust semiconductor material being actively developed for high-power and high-temperature applications, especially in the field of power electronics and sensors for harsh environments. This book, the fifth in a continuing series, focuses on SiC growth, defects, and devices. New developments in the growth of bulk SiC single-crystal materials, advances in the epitaxial growth of SiC, and progress in the characterization of materials properties and defects in SiC are featured. The volume also highlights the development of devices manufactured on this wide-bandgap semiconductor including: innovative device designs; characterization of device and materials properties; and improvements in wide-bandgap processing technology.
MoreTable of Contents:
Part I. Bulk Material and Characterization; Part II. Epitaxial Material and Characterization; Part III. Device Processing and Characterization; Author index; Subject index.
More
Silicon Carbide 2008 - Materials, Processing and Devices: Volume 1069
Subcribe now and receive a favourable price.
Subscribe
41 495 HUF
