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    Photo-Electroactive Non-Volatile Memories for Data Storage and Neuromorphic Computing

    Photo-Electroactive Non-Volatile Memories for Data Storage and Neuromorphic Computing by Han, Su-Ting; Zhou, Ye;

    Series: Woodhead Publishing Series in Electronic and Optical Materials;

      • GET 20% OFF

      • The discount is only available for 'Alert of Favourite Topics' newsletter recipients.
      • Publisher's listprice EUR 200.00
      • The price is estimated because at the time of ordering we do not know what conversion rates will apply to HUF / product currency when the book arrives. In case HUF is weaker, the price increases slightly, in case HUF is stronger, the price goes lower slightly.

        84 840 Ft (80 800 Ft + 5% VAT)
      • Discount 20% (cc. 16 968 Ft off)
      • Discounted price 67 872 Ft (64 640 Ft + 5% VAT)

    84 840 Ft

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    Availability

    printed on demand

    Why don't you give exact delivery time?

    Delivery time is estimated on our previous experiences. We give estimations only, because we order from outside Hungary, and the delivery time mainly depends on how quickly the publisher supplies the book. Faster or slower deliveries both happen, but we do our best to supply as quickly as possible.

    Product details:

    • Publisher Woodhead Publishing
    • Date of Publication 27 May 2020

    • ISBN 9780128197172
    • Binding Paperback
    • No. of pages352 pages
    • Size 228x152 mm
    • Weight 640 g
    • Language English
    • Illustrations 60 illustrations (20 in full color)
    • 107

    Categories

    Long description:

    Photo-Electroactive Non-Volatile Memories for Data Storage and Neuromorphic Computing summarizes advances in the development of photo-electroactive memories and neuromorphic computing systems, suggests possible solutions to the challenges of device design, and evaluates the prospects for commercial applications. Sections covers developments in electro-photoactive memory, and photonic neuromorphic and in-memory computing, including discussions on design concepts, operation principles and basic storage mechanism of optoelectronic memory devices, potential materials from organic molecules, semiconductor quantum dots to two-dimensional materials with desirable electrical and optical properties, device challenges, and possible strategies.

    This comprehensive, accessible and up-to-date book will be of particular interest to graduate students and researchers in solid-state electronics. It is an invaluable systematic introduction to the memory characteristics, operation principles and storage mechanisms of the latest reported electro-photoactive memory devices.

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    Table of Contents:

    1. Introduction to photo-electroactive non-volatile memory
    2. Characteristics and mechanisms in resistive switching memories
    3. Memory characteristics and mechanisms in transistor based memories
    4. Two-terminal optoelectronic memory device
    5. Three-terminal optoelectronic memory device
    6. Synaptic devices based on organic field-effect transistors
    7. Ionic synergetically coupled electrolyte gated transistors for neuromorphic engineering applications
    8. One-dimensional materials for photo-electroactive memories and synaptic devices
    9. Novel photo-electroactive memories and neuromorphic devices based on nanomaterials
    10. Organic and Hybrid Photo-Electroactive Polymer for Memories and Neuromorphic Computing
    11. Metal oxide materials for photo-electroactive memories and neuromorphic computing systems
    12. Perovskites for photo-tunable memories and neuromorphic computing
    13. Chalcogenide materials for optoelectronic memory and neurmorphic computing
    14. Device challenges, possible strategies and conclusions

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    Photo-Electroactive Non-Volatile Memories for Data Storage and Neuromorphic Computing

    Photo-Electroactive Non-Volatile Memories for Data Storage and Neuromorphic Computing

    Han, Su-Ting; Zhou, Ye; (ed.)

    84 840 HUF

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