Nitride Wide Bandgap Semiconductor Material and Electronic Devices
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88 567 Ft
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Product details:
- Edition number 1
- Publisher CRC Press
- Date of Publication 3 October 2016
- ISBN 9781498745123
- Binding Hardback
- No. of pages392 pages
- Size 254x178 mm
- Weight 884 g
- Language English
- Illustrations 469 Illustrations, black & white; 30 Tables, black & white 0
Categories
Short description:
This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs).
MoreLong description:
This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for electronic devices used in microwave power amplification, high-voltage switches, and high-speed digital integrated circuits.
MoreTable of Contents:
Nitride Wide Bandgap Semiconductor Material and Electronic Devices
More
Nitride Wide Bandgap Semiconductor Material and Electronic Devices
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