High-Speed Heterostructure Devices
From Device Concepts to Circuit Modeling
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81 482 Ft
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Estimated delivery time: In stock at the publisher, but not at Prospero's office. Delivery time approx. 3-5 weeks.
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Product details:
- Publisher Cambridge University Press
- Date of Publication 7 March 2002
- ISBN 9780521781527
- Binding Hardback
- No. of pages726 pages
- Size 244x170x38 mm
- Weight 1630 g
- Language English
- Illustrations 220 b/w illus. 40 tables 0
Categories
Short description:
A timely and comprehensive text on silicon heterostructures, covering physics, modeling techniques and device applications.
MoreLong description:
Fuelled by rapid growth in communications technology, silicon heterostructures and related high-speed semiconductors are spearheading the drive toward smaller, faster and lower power devices. High-Speed Heterostructure Devices is a textbook on modern high-speed semiconductor devices intended for both graduate students and practising engineers. This book is concerned with the underlying physics of heterostructures as well as some of the most recent techniques for modeling and simulating these devices. Emphasis is placed on heterostructure devices of the immediate future such as the MODFET, HBT and RTD. The principles of operation of other devices such as the Bloch Oscillator, RITD, Gunn diode, quantum cascade laser and SOI and LD MOSFETs are also introduced. Initially developed for a graduate course taught at Ohio State University, the book comes with a complete set of homework problems and a web link to MATLAB programs supporting the lecture material.
"...the book is clear and easy to use. The material is presented in an engaging manner and the reader is guided expertly through the territory of heterostructure devices. Apart from its intended use as a book for graduate students, it will be sought after by researchers and engineers, as it presents research material which is disseminated throughout the research literature and has never before been presented together in a book." Current Engineering Practice
Table of Contents:
Preface; Acknowledgements; 1. Heterostructure materials; 2. Semiclassical theory of heterostructures; 3. Quantum theory of heterostructures; 4. Quantum heterostructure devices; 5. Scattering processes in heterostructures; 6. Scattering-assisted tunneling; 7. Frequency response of quantum devices from DC to infrared; 8. Charge control of the two-dimensional electron gas; 9. High electric field transport; 10. I-V model of the MODFET; 11. Small-and large-signal AC models for the long-channel MODFET; 12. Small-and large-signal AC models for the short-channel MODFET; 13. DC and microwave electrothermal modeling of FETs; 14. Analytical DC analysis of short-gate MODFETs; 15. Small signal AC analysis of the short-gate velocity-saturated MODFET; 16. Gate resistance and the Schottky-barrier interface; 17. MODFET high-frequency performance; 18. Modeling high-performance HBTs; 19. Practical high-frequency HBTs; Index.
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