Short description:

This handbook presents the key properties of silicon carbide (SiC), the power semiconductor for the 21st century. It describes related technologies, reports the rapid developments and achievements in recent years, and discusses the remaining challenging issues in the field.

Long description:

This handbook presents the key properties of silicon carbide (SiC), the power semiconductor for the 21st century. It describes related technologies, reports the rapid developments and achievements in recent years, and discusses the remaining challenging issues in the field.

The book consists of 15 chapters, beginning with a chapter by Professor W. J. Choyke, the leading authority in the field, and is divided into four sections. The topics include presolar SiC history, vapor-liquid-solid growth, spectroscopic investigations of 3C-SiC/Si, developments and challenges in the 21st century; CVD principles and techniques, homoepitaxy of 4H-SiC, cubic SiC grown on 4H-SiC, SiC thermal oxidation processes and MOS interface, Raman scattering, NIR luminescent studies, Mueller matrix ellipsometry, Raman microscopy and imaging, 4H-SiC UV photodiodes, radiation detectors, and short wavelength and synchrotron X-ray diffraction.

This comprehensive work provides a strong contribution to the engineering, materials, and basic science knowledge of the 21st century, and will be of interest to material growers, designers, engineers, scientists, postgraduate students, and entrepreneurs.

Table of Contents:

Part I: General 1. Silicon Carbide: Presolar SiC Star Dust Grains and the Human History of SiC from 1824 to 1974  2. Recent Progresses in Vapor-liquid-solid Growth of High-Quality SiC Single Crystal Films and Related Techniques  3. Spectroscopic investigations for the dynamical properties of defects in bulk and epitaxially grown 3C-SiC/Si (100)  4. SiC Materials, Devices and Applications: A Review of Developments and Challenges in the 21st Century  Part II: SiC Materials Growth and Processing  5. CVD of SiC Epilayers -- Basic Principles and Techniques  6. Homo-epitaxy of thick crystalline 4H-SiC structural materials and applications in electric power system  7. Cubic SiC grown on 4H-SiC: Growth and Structural Properties  8. SiC thermal oxidation process and MOS interface characterizations: From carrier transportation to single-photon source  Part III: SiC Materials Studies and Characterization  9. Multiple Raman Scattering Spectroscopic Studies of Crystalline Hexagonal SiC Crystals  10. Near-Infrared Luminescent Centers in Silicon Carbide  11. 4H-/6H-SiC single crystal wafers studied by Mueller matrix ellipsometry and transmission ellipsometry  12. Raman Microscopy and Imaging of Semiconductor Films Grown on SiC Hybrid Substrate Fabricated by the Method of Coordinated Substitution of Atoms on Silicon  Part IV: SiC Devices and Developments  13. 4H-SiC-Based Photodiodes for Ultraviolet Light Detection  14. SiC radiation detector based on metal?insulator-semiconductor structures  15. Internal Atomic Distortion and Crystalline Characteristics of Epitaxial SiC Thin Films Studied by Short Wavelength and Synchrotron X-ray Diffraction