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    Defect Passivation and Doping Engineering for Highly Efficient Perovskite Solar Cells

    Defect Passivation and Doping Engineering for Highly Efficient Perovskite Solar Cells by Li, Meicheng;

    Series: Advances in Materials Science and Engineering;

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      • The discount is only available for 'Alert of Favourite Topics' newsletter recipients.
      • Publisher's listprice GBP 130.00
      • The price is estimated because at the time of ordering we do not know what conversion rates will apply to HUF / product currency when the book arrives. In case HUF is weaker, the price increases slightly, in case HUF is stronger, the price goes lower slightly.

        65 793 Ft (62 660 Ft + 5% VAT)
      • Discount 10% (cc. 6 579 Ft off)
      • Discounted price 59 214 Ft (56 394 Ft + 5% VAT)

    65 793 Ft

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    Availability

    Estimated delivery time: In stock at the publisher, but not at Prospero's office. Delivery time approx. 3-5 weeks.
    Not in stock at Prospero.

    Why don't you give exact delivery time?

    Delivery time is estimated on our previous experiences. We give estimations only, because we order from outside Hungary, and the delivery time mainly depends on how quickly the publisher supplies the book. Faster or slower deliveries both happen, but we do our best to supply as quickly as possible.

    Short description:

    Understanding the fundamentals of trap defects as well as passivation and doping strategies in perovskite solar cells is helpful for improving device efficiency and stability. This book summarizes the strategies of defect passivation and material doping to clearly describe the underlying mechanisms for high-efficiency and stable PSCs.

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    Long description:

    Perovskite solar cells (PSCs) have attracted increasing interest from researchers due to their superb power conversion efficiencies. The intrinsic trap defects, unavoidably formed in the fabrication process, can induce nonradiative recombination, ion migration, I-V hysteresis, and instability of PSCs. However, trap defects are not always harmful. Fully understanding the fundamentals of trap defects as well as the passivation and doping strategies is helpful for further improving device efficiency and stability. This book summarizes the methods and strategies of defect passivation and material doping aiming to clearly describe the underlying mechanisms for high-efficiency and stable PSCs.


    ? Introduces the fundamental characteristics of perovskite material defects


    ? Discusses the main strategies, principles, and applications of defect passivation


    ? Describes defect passivation consequences and characterization methods


    ? Covers principles, methods, and applications of doping engineering in perovskites


    ? Explores the structural design, advantages, characteristics, fabrication methods, and future development of perovskite homojunction


    Engineers and researchers working with photovoltaic generation, solar cells, semiconductors, and related topics will find this book to be an invaluable resource.

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    Table of Contents:

    0. Front Matter.  1. Introduction.  2. Basics of Perovskite Material and Defects.  3. Defect Passivation Strategies.  4. Effect of Defect Passivation.  5. Characterization and Analysis of Defects.  6. Basics of Doping in Halide Perovskite Materials.  7. P-Type Doping in Perovskites.  8. N-Type Doping in Perovskites.  9. P-N Homojunction Perovskites.  10. Interfacial Doping of Perovskite Solar Cells.  11. Other Applications of Doping.  12. Conclusions and Outlook.  

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